@Article{MorelhãoFornRappAbra:2017:NaChBi,
               author = "Morelh{\~a}o, S. L. and Fornari, Celso Israel and Rappl, Paulo 
                         Henrique de Oliveira and Abramof, Eduardo",
          affiliation = "{Universidade de S{\~a}o Paulo (USP)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)} and {Instituto Nacional de Pesquisas Espaciais 
                         (INPE)}",
                title = "Nanoscale characterization of bismuth telluride epitaxial layers 
                         by advanced X-ray analysis",
              journal = "Journal of Applied Crystallography",
                 year = "2017",
               volume = "50",
                pages = "399--410",
             keywords = "bismuth telluride, model structure simulation, nanostructured 
                         domains, three-dimensional reciprocal-space maps, X ray 
                         diffraction.",
             abstract = "The surface properties of topological insulators are strongly 
                         correlated with their structural properties, requiring 
                         high-resolution techniques capable of probing both surface and 
                         bulk structures at once. In this work, the high flux of a 
                         synchrotron source, a set of recursive equations for fast X-ray 
                         dynamical diffraction simulation and a genetic algorithm for data 
                         fitting are combined to reveal the detailed structure of bismuth 
                         telluride epitaxial films with thicknesses ranging from 8 to 
                         168\ nm. This includes stacking sequences, thickness and 
                         composition of layers in model structures, interface coherence, 
                         surface termination, and morphology. The results are in agreement 
                         with the surface morphology determined by atomic force microscopy. 
                         Moreover, by using X-ray data from a zero-noise area detector to 
                         construct three-dimensional reciprocal-space maps, insights into 
                         the nanostructure of the domains and stacking faults in Bi2Te3 
                         films are given.",
                  doi = "10.1107/S1600576717000760",
                  url = "http://dx.doi.org/10.1107/S1600576717000760",
                 issn = "0021-8898",
             language = "en",
        urlaccessdate = "27 abr. 2024"
}